摘要
采用化学溶液分解法(CSD)在p-Si(111)衬底上制备了(Bi0.9Nd0.1)2Ti2O7薄膜。用X射线衍射技术分析了薄膜的结构和结晶性,结果显示,在600℃退火10min得到了结晶性较好、表面致密的多晶薄膜;用原子力显微镜描述了薄膜的表面形貌,与在XRD中观察到的择优取向是一致的;同时还研究了薄膜的电学性能。结果表明,在0～6V范围内,薄膜的漏电流小于1.53×10-10A;在室温100kHz下,其介电常数为166,介电损耗因子为0.227,显示出薄膜具有较好的绝缘性和介电性能。
（Bi0.9Nd0.1）2Ti2O7 thin films were prepared on p-Si （111 ） substrates by a chemical solution deposition method. The structural characteristics and crystallinity of the films were studied by X-ray diffraction （XRD）. It was found that oriented films with good crystallinity were obtained by annealing at about 600 ℃ for 10 min. The surface morphology of the films was analyzed by atomic force microscopy （AFM）, and the 〈 111 〉 was a preferred orientation. The electric properties of the thin films were also examined. The results showed that, the leakage current was below 1.53×10^-10 A at an applied voltage range of 0 ~ 6 V ; at room temperature, the dielectric constant and loss were 166 and 0. 227, respectively. The results showed that thin films had good insulation and dielectric properties.
出处
《中国稀土学报》
CAS
CSCD
北大核心
2007年第4期505-508,共4页
Journal of the Chinese Society of Rare Earths
基金
国家自然科学基金(60278036
50172031)资助项目
