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Positively Charged Exciton in Double-Layer Quantum Dots 被引量:1

Positively Charged Exciton in Double-Layer Quantum Dots
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摘要 The Hamiltonian equation for positively charged exciton in double-layer harmonic quantum dots is solved numerically by using the exact diagonalization techniques. We find that the correlation energy Ec of positively charged exciton increases with increasing the confinement strength and the binding energy decreases obviously for the heavy hole.
出处 《Communications in Theoretical Physics》 SCIE CAS CSCD 2007年第2X期353-356,共4页 理论物理通讯(英文版)
基金 The project supported by the Natural Science Foundation of Guangdong Province under Grant No. 04009519 and National Natural Science Foundation of China under Grant No. 10475021
关键词 charged-exciton complexes quantum dots 量子力学 物理分析 复合物 相对论
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参考文献27

  • 1A.I.Ekimov,A.L.Efros,and A.A.Onushchenko,Solid State Commun.56 (1985) 921. 被引量:1
  • 2A.D.Yoffe,Adv.Phys.42 (1993) 173. 被引量:1
  • 3L.Banyai and S.W.Koch,Semiconductor Quantum Dot,World Scientific,Singapore (1993). 被引量:1
  • 4M.A.Lampert,Phys.Rev.Lett.1 (1958) 450. 被引量:1
  • 5K.Kheng,R.T.Cox,Y.Merle d'Aubigne,et al.,Phys.Rev.Lett.71 (1993) 1752. 被引量:1
  • 6A.J.Shields,M.Paper,M.Y.Simmons,and D.A.Ritchie,Phys.Rev.B 52 (1995) 7841. 被引量:1
  • 7G.Finkelstein,H.Shtrikman,and I.Bar-joseph,Phys.Rev.B 53 (1996) R1709. 被引量:1
  • 8D.Gekhtman,E.Cohen,Arza Ron,and L.N.Pfeiffer,Phys.Rev.B 54 (1996) 10320. 被引量:1
  • 9D.R.Yakovlev,V.P.Kochereshko,R.Suris,et al.,Phys.Rev.Lett.79 (1997) 3974. 被引量:1
  • 10B.Stébé and A.Ainane,Superlattices Microstruct.5 (1989) 545. 被引量:1

同被引文献17

  • 1JACAK L, HAWRYLAK P, WOJS A. Quantum Dots [M]. First Version. Berlin: Springer, 1998: 5-12. 被引量:1
  • 2YOFFE A D. Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems [J]. Adv Phys, 2001, 50(1): 1-208. 被引量:1
  • 3BROZAK G, MCCOMBE B D. Potential and magnetic field confinement of shallow donor impurities in semiconductor quantum wells [J]. Phys Rev B, 1989, 40(2): 1265-1270. 被引量:1
  • 4KASAPOGLU E, SARI H, SOKMEN I. Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field [J]. Physica B, 2003, 339(1): 17-22. 被引量:1
  • 5KASAPOGLU E, SOKMEN I. Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields [J]. Physica E, 2005, 27(!-2): 198-203. 被引量:1
  • 6KASAPOGLU E, SARI H, SOKMEN I. Geometrical effects on shallow donor impurities in quantum wires [J]. Physica E, 2003, 19(4): 332-335. 被引量:1
  • 7VARSHNI Y P. Binding energy of a screened donor in a spherical quantum dot with a parabolic potential [J]. Superlattices and Microstructures, 2001, 29(3): 233-238. 被引量:1
  • 8GOMEZ S S, ROMERO R H. Binding energy of an off-center shallow donor D- in a spherical quantum dot [J]. physica E, 2010, 42(5): 1563-1566. 被引量:1
  • 9ZENG Zaiping, GAROUFAL1S C S, BASKOUTAS S, et al. Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field [J]. Phys Lett A, 2012, 376(42-43): 2712-2716. 被引量:1
  • 10XIE Wenfang, GU Juan. Exciton bound to a neutral donor in parabolic quantum dots [J]. Phys Lett A, 2003, 312(5-6): 385-390. 被引量:1

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