摘要
采用磁控溅射技术以10%Si～90%Al合金为靶材,通入O_2将Si氧化成SiO_2,Al氧化成Al_2O_3,在普通PET薄膜表面制备具有高阻隔性无机阻隔薄膜层,以增加其阻隔性。传统的磁控溅射法制备SiO_2膜工艺,大多采用射频溅射法,但其成本较高,效率较低,无法充分满足大面积工业化镀膜生产的需要。而采用10%Si～90%Al合金不仅可以实现直流溅射工艺,而且测量结果表明,薄膜的阻隔性得到大幅度提高。
The DC magnetron sputtering method was adopted to sputter a Si-Al alloy target for high barrier properties of SiO2-Al2 O3 layer on PET surface. It is well known that for preparing inorganic SiO2 layer RF magnetron sputtering shall be employed in general. But a long deposition period and low efficacy makes it impossible for coating in large films and industrialized application due to economical reason. With Si-Al alloy target it now becomes possible for high barrier properties in PET film in DC sputtering based on the results obtained in our experiments.
出处
《包装工程》
CAS
CSCD
北大核心
2007年第8期40-42,共3页
Packaging Engineering
