摘要
在ＴＥＭ中采用衍衬成像方法系统观察了在室温下形变纯铝中位错胞壁的形成与发展，以及位错环的出现。获得了胞壁的平均宽度及位错环的平均尺寸随应变的变化规律。
The diffraction contrast image methods with transmission electron microscope was used to study the dislocation cell walls occurred and developed in the pure aluminum during uniaxial tensile test at room temperature. We found the average width of cell walls and the average size of dislocation loops Variation rule with strains and determined the quantitative relations between the size of dislocation loops and the flow stresses.
出处
《电子显微学报》
CAS
CSCD
1997年第2期145-147,共3页
Journal of Chinese Electron Microscopy Society
