摘要
介绍了低压VDMOS的结构和各个参数及相互间的关系,并按TSUPREM-4工艺仿真软件的工艺流程顺序给出了各步工艺的设计思路、方法、注意事项。对外延层厚度进行了计算,并用该软件实现了耐压55 V,导通电阻11 MΩ的低压VDMOS器件结构的工艺设计,绘出了仿真结构图。
This paper introduces the structure of low- voltage VDMOS devices and discusses the relationship between each parameter. According to the order of TSUPREM - 4,it gives the design methods and regulations of each process. Using TSU- PREM - 4 to achieve the process design of low - voltage VDMOS with 55V breakdown voltage and 11 MΩ on - resistance.
出处
《现代电子技术》
2007年第15期161-163,共3页
Modern Electronics Technique
