摘要
为了降低C-RAM器件的操作电流,利用0.18μm标准CMOS工艺线制备出外径为260nm的W亚微米管加热电极,并对其进行了电学性能的表征.使用W亚微米管加热电极制备出C-RAM器件,并通过疲劳特性测试分析了器件失效的原因.结果表明,W亚微米管具有良好的电学稳定性和疲劳特性,为降低C-RAM器件的操作电流提供了一种非常有效的途径.
In order to reduce the reset current of C-RAM devices,a W sub-micron tube heating electrode with external diameter of 260nm was fabricated in standard 0.18μm CMOS,and its electrical performance was characterized. A typical C-RAM device was manufactured using a W sub-micron tube heating electrode,and the causes of invalidation were analyzed through fatigue behaviour testing. The results indicate that a W sub-micron tube heating electrode with favourable electrical stability and fatigue behaviour,as well as thermal stability,provides an efficient path for reducing the reset current of a C-RAM device.
基金
国家重点基础研究发展规划(批准号:2006CB302700)
国家高技术研究发展计划(批准号:2006AA03Z360)
中国科学院(批准号:Y2005027)
上海市科委(批准号:05JC14076
0552nm043
AM0517
06QA14060
06XD14025
0652nm003
06DZ22017)资助项目~~
