摘要
用龈上皮细胞在底物上培养，倒置显微镜下观察生长晕（ｏｕｔｇｒｏｗｔｈ）扩展的程度，扫描电镜下观察细胞贴附情况。细胞在１～８ｄ的培养中在硅酮底物上形成的生长晕明显小于在羟基磷灰石上的生长晕。电镜观察见上皮细胞直接附着ＨＡ，可见分裂相，上皮细胞不附着硅酮，少分裂相。硅酮作为生物隔膜材料（ＢＭＴ）能阻止上皮细胞生长且对牙周病治疗防止龈上皮过长有一定临床意义。
The growth of human gingival epithelial cell on silicone or HA substrate was investigated with inverted and scanning electron microscopes in vitro . The outgrowth of the cells on silicone was smaller than that on HA during 1 8d culture. Full attachment and mitosis of the cells on HA was observed, and poor attachment and fewer mitosis on silicone. The results indicate that silicone may prevent the growth of gingival epithelial cell and may be used as a BMT material.
出处
《实用口腔医学杂志》
CAS
CSCD
北大核心
1997年第1期18-20,共3页
Journal of Practical Stomatology
关键词
牙龈
上皮细胞
生长
硅酮
羟基磷灰石
生物隔膜
Gingiva
Epithelial cell
Hydroxyapatite
Silicone
Barrier membrane technique
