摘要
利用“点籽晶”快速生长技术生长了掺杂硫酸钾(K2SO4)的磷酸二氢钾(KDP)晶体,并对硫酸根类杂质离子对晶体的结构及光学质量的影响进行了研究。结果表明:在掺杂相对含量为50×10-6条件下,K2SO4开始对KDP晶体产生一定影响,主要表现在不同扇形区域的结构略有改变,其原因主要在于硫酸根与KDP晶体各扇形结构有关;杂质粒子对晶体透过率、单轴性没有明显影响,但是热膨胀系数增大,光损伤阈值略有降低。
Effects of sulfate doping on the growth and properties of KDP crystals were studied by ＂point-seed＂ growth meth. The results show that this kind of impurity with low content sulfate anion has no obvious effect on the growth of KDP-type crystals. The structure of KDP crystals is little affected by this kind of impurity when the content of sulfate anion is 50 × 10^-6. Optical properties comparison between the doped KDP crystal and the pure KDP crystal proves that sulfate doping has no evident effect on KDP＇s transition, homogeneity but it decreases the laser damage threshold （LDT）.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2007年第5期750-754,共5页
High Power Laser and Particle Beams
基金
国家863计划项目资助课题
国家自然科学基金资助课题(10676019)
关键词
KDP晶体
硫酸根
掺杂
光学质量
KDP crystal
Sulfate anion
Doper
Optical property
