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808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制 被引量:4

Influential Factors and Control of Wavelength of 808um GaAs/AlGaAs High Power Laser Diode
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摘要 通过对影响GaAs/AlGaAs激光器波长的各种因素的分析讨论与实验研究,制备了性能优良的808umGaAs/AlGaAs大功率激光器材料.应用此材料制作的激光器的结果表明,器件室温连续输出功率1W时,激射波长仍可保持在808nm附近,器件的室温连续输出功率已达2.3W. The comprehensive analysis and experimental study on the factors in fluencing the wavelength result in the fabrication of high quality 808um GaAs/AlGaAs High Power Laser diode materials and achievements of the precise control of the wavelength. The performance of the device shows that the wavelength remains around 808um when the room temperature continuous wave output power is up to 1W. The recorded output power hasreached 2. 3W.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1997年第2期108-112,共5页 半导体学报(英文版)
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