摘要
提出了一种低电压、低功耗的甲乙类S2I存储单元,电源电压为±0.5V。电路采用CMOS开关以增大输入信号动态范围,使用交叠时钟控制方案以改善性能。使用EKVMOS晶体管模型参数进行了电路仿真,仿真结果表明该电路的性能优于基本甲乙类存储单元。文中也给出了基于该存储单元的通用积分器电路。
A low voltage low power class AB switched current S^2I cell for analogue sampled data applications is introduced. The designed circuit using the dual power supply of ±0. 5 V,CMOS switches are used in the circuit to increase dynamic range of the input signal. The clocking scheme is optimum overlap for improved performance but the fully non - overlapping clocks. Simulation is done by using EKV MOST models. Simulation results confirm the cell to be better than the conventional class AB memory cell operating under similar conditions. Application of the new cell in a switched - current integrator is demonstrated.
出处
《现代电子技术》
2007年第11期165-167,171,共4页
Modern Electronics Technique
