摘要
采用超高真空热丝化学气相沉积(HFCVD)系统,以甲烷和氢气为反应气体,在YG13(WC-13%Co)硬质合金基体上沉积金刚石薄膜。用场发射扫描电子显微镜(FESEM)和X射线衍射仪(XRD)对金刚石薄膜进行检测分析,研究YG13经950℃、3h硼化预处理后沉积气压对金刚石薄膜形貌和生长织构的影响;通过压痕法比较硼化与二步法两种预处理方法对金刚石薄膜附着性能的影响。结果表明,基体经硼化预处理后表面形成CoB、CoW2B2、CoW3B3相;当沉积温度为750～800℃,碳源浓度为3.3%时,薄膜表面形貌和生长织构随着沉积气压改变有明显的变化;硼化预处理后所得样品在1500N载荷下压痕表现出良好的附着性能,较二步法预处理更加有效地改善了膜-基附着性能。
The diamond films were deposited on boronized WC-13%Co substrates via hot filament chemical vapor deposition in a reactor with a background pressure of 10^-6 Pa. The surface morphology, texture and adhesion of the diamond films were investigated by means of field emission scanning electron microscope, X-ray diffractrometry and Rockwell hardness tester, respectively. The results show that a surface layer of stable cobalt borides of CoB, CoW2 B2 and CoW3B3 formed at 950 ℃ can effectively reduce the diffusion of Co to the surface of cemented carbide substrates when diamond films are deposited. The surface morphology and texture of the diamond films are remarkably affected by the ambient pressure when the substrate temperature is 750-800℃ and the percent of CH4 is 3.3%. Compared with the two-step pretreatment, the boronizing is much better pretreatment to improve the adhesion.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2007年第5期775-782,共8页
The Chinese Journal of Nonferrous Metals
