摘要
Cu/低k互连的电迁移失效与互连材料、工艺、结构和测试条件都有着密切的联系。论述了近年来铜互连电迁移可靠性的研究进展,讨论了电迁移的基本原理、失效现象及其相关机制和微效应以及主导失效的机制——界面扩散等,同时探讨了改善铜互连电迁移性能的各种方法,主要有铜合金、增加金属覆盖层及等离子体表面处理等方法,并指出了Cu互连电迁移可靠性研究有待解决的问题。
The electromigration failure of Cu/low-k is closely related with material, processing, structure and test condition. The studies on the electromigration reliability of Cu interconnection are reviewed. The fundamental of electromigration, the phenomenon of electromigration failure, the failure mechanism, the micro-effects and the dominant failure mechanism-interracial diffusion are introduced. Some effective ways are discussed to improve the electromigration failure, such as Cu alloying, metal capping, and surface treatment. Unsolved problems of Cu interconnect electromigration reliability studies are given.
出处
《微纳电子技术》
CAS
2007年第4期211-216,共6页
Micronanoelectronic Technology
基金
西安应用材料创新基金研究项目(XA-AM001)
关键词
铜互连
电迁移
界面扩散
失效
Cu interconnect
electromigration
interfacial diffusion
failure
