摘要
利用射频共溅射方法制备了一系列不同金属体积分数fv的Fe-SiO2金属-绝缘体颗粒膜。系统地研究了薄膜的微结构、磁性、隧道磁电阻效应(TMR)和巨霍耳效应(GHE)。在fv=0.33处得到最大磁电阻值为-3.3%,fv=0.52处饱和霍耳电阻率达最大值,为18.5μΩ.cm。在300℃以内的不同温度下将Fe0.52(SiO2)0.48颗粒膜回火,霍耳电阻率随温度的变化不大,即样品具有良好的热稳定性。这表明Fe0.52(SiO2)0.
Fe-SiO2 metal-iusulator granular films with various metal volume fractions （fv） were fabricated by RF co-sputtering. The mlcrostructure and tunneling magneto-resistance （TMR） as well as the giant Hall effect （G- HE） were systematically investigated. The Fe0.33（ SiO2）0.67 film exhibits the largest TMR value of -3.3% at room temperature under 1.3 T magnetic field. The sample with fv=0.52 exhibits the largest Hall resistivity of 18.5 μΩ·cm. The Hall resistivity does not decrease much, when the Fe0.52（SiO2）0.48 granular film annealed at different temperature up to 300℃.It indicates a good thermal stability of GHE for this film. Thus the film may be considered as a magnetic field sensor for operating temperature below 300℃.
出处
《真空与低温》
2007年第1期21-24,共4页
Vacuum and Cryogenics
基金
国家自然科学基金项目(批准号:50371034)资助
关键词
颗粒膜
隧道磁电阻效应
巨霍耳效应
granular films
tunneling magneto-resistance effect
giant Hall effect
