摘要
为了改进电力电子系统的性能、减小其尺寸以及降低成本,大功率半导体器件将继续朝着高电压和大电流容量的方向发展。IGCT也不例外。本文描述具有电压额定值为4.5kV～6.5kV的一个新的IGCT系列的高安全工作区(SOA)能力。
To improve performance and reduce the size and cost of power electronic systems, the development trend in high power semiconductors continues towards higher current and voltage capabilities. The IGCT is no exception and in this article, the high SOA capability of a new range of IGCTs with voltage ratings from 4.5kV to 6.5kV is described.
出处
《电力电子》
2007年第1期44-46,共3页
Power Electronics
