摘要
鉴于“方形”势阱描述量子阱中的空穴运动行为过于简单、理想,引入了反比相关的双曲余弦平方势,并在量子力学框架内,利用这个相互作用势把空穴的Schrodinger方程化为了超几何方程,用系统参数和超几何函数严格地求解了空穴的本征值和本征函数,并以Ga1-xAlxAs-GaAs-Ga1-xAlxAs量子阱为例,计算了阱内的空穴跃迂。结果表明,空穴在量子阱中的能量是量子化的,而阱内的能级数目与系统参数有关。
Usual interaction potential is the squared potential well to describe the motion behaviour of a hole in the single quantum well. The new interaction potential with ch-2x form is assumed. In the frame of quantum mechanics, SchrSdinger equation to describe the particle motion is reduced to the hypergeometric equatin by this potential. The eigenvalue and the eigefunction problem of the SchrSdinger equation are transformed to the eigenvalue and the eigefunction problem of the hypergeometric equation. The eigenvalue and the eigefunction of the system are calculated, and the distribution and number of level in quantum well are discussed. As example,the level and the transition of a hole in the single quantum well for material Ga1-xAlxAs-GaAs-Ga1-xAlxAs are calculated. It shows that coincidence between the theory and the experiment is improved luther.
出处
《量子电子学报》
CAS
CSCD
北大核心
2007年第2期216-220,共5页
Chinese Journal of Quantum Electronics
关键词
光电子学
超晶格
量子阱
超几何方程
单粒子能级
optoelectronics
superlattice
quantum well
hypergeometric equatin
single particle level
