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0.18-μm CMOS3.1-10.6GHz超宽带低噪声放大器设计 被引量:12

Design of an ultra-wideband low noise amplifier in a 0.18-μm CMOS
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摘要 介绍了一种基于0.18-μm CMOS工艺、适用于超宽带无线通信系统接收前端的低噪声放大器。在3.1~10.6GHz的频带范围内对它仿真获得如下结果:最高增益12dB;增益波动小于2dB;输入端口反射系数S11小于-10dB;输出端口反射系数S22小于-15dB;噪声系数NF小于4.6dB。采用1.5V电源供电,功耗为10.5mW。与近期公开发表的超宽带低噪声放大器仿真结果相比较,本电路结构具有工作带宽大、功耗低、输入匹配电路简单的优点。 A low noise amplifier (LNA) in 0.18-um CMOS for ultra-wideband (UWB) front-ends is presented. In the 3.1-10.6 GHz band it has following simulation results: a peak gain of 12dB, an input reflection of less than -10dB, an output reflection of less than -15dB, and a noise figure (NF) of less than 4.6dB. It consumes 10.5mW under a 1.5V supply. A comparison with recently published UWB LNA's shows that this LNA has broader bandwidth, lower power consumption and simpler input matching network.
出处 《电路与系统学报》 CSCD 北大核心 2007年第1期44-47,共4页 Journal of Circuits and Systems
关键词 超宽带 低噪声放大器 CMOS ultra-wideband low noise amplifier CMOS
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参考文献5

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