摘要
随着CMOS工艺的不断发展,将离子敏场效应晶体管(ISFET)传感器与CMOS技术相结合,以达到提高集成度、降低成本、减小系统尺寸、提高系统可靠性。在对与CMOS工艺兼容的ISFET传感器结构模型分析的基础上,研究了一种测量电路,它具有有利于消除体效应的影响、减少共模噪声的影响、克服温度漂移等优点。对该测量电路进行模拟仿真,得到输出电压与pH值之间的关系图,结果表明:其结果与理论模型仿真值基本吻合。
With the development of CMOS,ion sensitive field effect transistor（ISFET） is combined with CMOS technology to increase integration, decrease price, deduce the system size, improve the system properties and so on. Based on analyzing structures of ISFET sensors compatible with CMOS technology, a kind of measuring circuits is researched. It can reduce body effect, common modle noise, temperature drift and so on. A kind of ISFET measuring circuits is simulated. Relation pattern of output voltage and pH value is similar with the result of theoretical model.
出处
《传感器与微系统》
CSCD
北大核心
2007年第2期19-20,24,共3页
Transducer and Microsystem Technologies
关键词
ISFET传感器
CMOS工艺
pH值
测量电路
ion sensitive field effect transistor（ISFET）sensor
CMOS technology
pH value
measuring circuit
