摘要
采用变激发功率密度下的光致发光，变温下的光致发光等手段，研究了混晶ＧａＡｓ１－ｘＰｘ：Ｎ（ｘ＝０．４）样品中各发光带的发光特性，比较了不同激发条件下Ｎｒ与Ｎｘ发光带的不同行为，求得在不同的温度区间内，Ｎг及Ｎｘ不同的激活能，结果表明Ｎг与Ｎｘ分属不同的杂质发光中心，有着不同的束缚激子的机制．
The photoluminescence under different exciting densities and varying temperatures is applied to study of the PL characteristic of г,Nr and Nx bands in ternary GaAs1-x Px: N (x = 0. 4) alloys. The PL behaviors of Nгr and Nx are compared under different exciting conditions. The obtained activation energies of Nг and Nx bands corresponding to two temperature regions are found to be different. These results show that the Nг and Nx belong to different impurity centers with the different mechanisms of N-bound exciton.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1996年第6期876-879,共4页
Journal of Xiamen University：Natural Science
基金
国家和福建省自然科学基金
