摘要
讨论了半导体浪涌保护器件的基区宽度，着重分析了基区宽度与开通电压、静电电容、浪涌能力的关系，指出控制基区宽度，可有效地提高器件的浪涌能力。
A surge protection semiconductor device has been developed to suppress lightning surge and protect electronic systems.Base width,which is the important parameter of the device,is discussed in particular.The dependence of on state voltage,static capacitance and surge capability on the base width is analyzed with emphasis.It is concluded that controlling base width properly can effectively decrease on state voltage and static capacitance,and improve surge capability of the device.
出处
《微电子学》
CAS
CSCD
1996年第6期387-389,共3页
Microelectronics
关键词
半导体器件
浪涌保护器
基区宽度
Semiconductor device,Surge protection circuit,Base width EEACC 1210,2560H
