摘要
我们用高温熔融和空气中碎火的方法制取了非晶 Ge-S 块状材料,又以该材料为蒸发源材料,用热蒸发方法制备非晶 Ge-S 薄膜。对不同配方比的薄膜进行了光、电性能测试并分析和讨论了测试结果,得出了光学禁带宽度与硫含量的关系。
The authors prepared amorphous Ge-S bulk materials by a method of high temperature melting with air quenching and then they take it as a vaporization soures by hearting vaporization method to prepare amorphous Ge-S film.Optical and electrical properties of the film for various componsition of sulfur are measured.The results are analysised and discussed.Finally,the relationship between the width of the optical for- bidden band and concentrations of sulfur are obtained.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第4期368-373,共6页
Journal of University of Electronic Science and Technology of China
关键词
非晶态
半导体
薄膜
Ge-S
amorphous semiconductor
chalcogenide glass semiconductor
localized state
width of optical forbidden band
optical absorption coefficient
