摘要
采用活性炭还原SnO2粉末得到的金属锡作为催化剂,在硅片上生长出SiOx(x在1～2之间)纳米线.分析900℃～1 100℃下生长出来的SiOx纳米线发现,温度越高,纳米线越密集,表面也更光滑;分析不同温度梯度下生长出来的纳米线表明,硅片上温度梯度越小,生长的纳米线分布越均匀,直径也越均匀.并结合实验条件对SiOx纳米线的生长机理进行初步探讨.
SiOx nanowires have been synthesized on the silicon substrates by using the reduced tin as active catalyst. The morphologies of the nanowircs synthesized at different temperatures and temperature gradient are analyzed. It is found that the higher the synthesis temperature, the denser and slipperier of the synthesized nanowires. It is also found that when the nanowires synthesized at a lower temperaturc gradient the diameter distribution of the nanowircs became more unifiorm, ranging from 40 nm to 50nm. In addition, the possible growth mechanism of the SiOx nanowircs was discussed,
出处
《汕头大学学报（自然科学版）》
2006年第4期36-40,共5页
Journal of Shantou University：Natural Science Edition
关键词
氧化硅纳米线
气-液-固生长模式
silicon oxidc nanowirc
vapor-liquid-solid growth mechanism
