摘要
提出了一种应用于射频领域的复合多晶硅栅LDMOS结构,并提出了具体的工艺实现方法。此结构采用栅工程的概念,设计的栅由S-gate和D-gate两块并列组成,S-gate用高功函数P型多晶硅材料,D-gate用低功函数N型多晶硅材料。MEDICI模拟结果表明,该结构能够降低沟道末端和漏极附近的最高电场强度,提高器件的跨导和截止频率;同时,还能够提高器件的击穿电压,并减小器件的热载流子效应。
A novel dual-material gate LDMOSFET （DMG-LDMOS） structure for RF application is proposed, along with its process technology. Using the concept of gate engineering, the gate of the DMG-LDMOS consists of S-gate （the first gate approaching source with high work-function material p^＋ polysilicon） and D-gate （the second gate approaching drain with low work-function material n^＋ polysilicon）. MEDICI simulation shows that the DMG- LDMOS can reduce the peak electric field at the end of the channel and around the drain, and improve transconductance and cutoff frequency of the device. Meanwhile, this structure can increase breakdown voltage of the device and reduce its hot carrier effect.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第6期810-813,共4页
Microelectronics
基金
国家自然科学基金资助项目(60576066)
安徽省自然科学基金资助项目(2006KJ012A)
安徽省高等学校青年科研基金资助项目(2005kj1031)
关键词
复合栅
跨导
截止频率
功函数
LDMOS
热载流子效应
Dual-material gate
Transeonductance
Cutoff frequency
Work-function
LDMOS
Hot carrier effect
