摘要
从等温和非等温两个角度,在250 K^573 K(-23℃~300℃)范围内,对体硅高压LDMOS的主要电学参数随温度的变化进行了研究。系统地研究了体硅高压LDMOS阈值电压、导通电阻和饱和电流等主要电学参数的温度效应及其机理。
In this paper,the research of the temperature effect on the key LDMOS electrical parameters over the temperature rage of 250 K - 573 K is presented, by using both isothermal and non - isothermal methods. The temperature effect and the mechanism of LDMOS Vth,on- state resistance and saturation current, are reported systematically.
出处
《现代电子技术》
2006年第23期124-126,共3页
Modern Electronics Technique
关键词
体硅LDMOS
等温
非等温
负阻效应
bulk - silicon LDMOS
isothermah non - isothermal
negative resistance effect
