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基于ISE的AlGaN/GaN HEMT的C-V转移特性模拟

The Simulation of C-V Transfer Characteristic AlGaN/GaN HEMT with ISE TCAD
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摘要 主要叙述了在ISE软件平台上对AlGaN/GaN HEMT的转移特性以及C—V特性的模拟.首先实现了通过引入δ掺杂层的方法对器件的极化效应的模拟.其次,在此基础上改变了的AlGaN/GaN HEMT中spacer层的厚度,分别模拟了器件的转移特性和C-V特性.从结果得知,随着spacer层厚度的增加器件的跨导和电容均有所降低,所以应该在不同的应用领域选择不同的spacer层厚度. The transfer characteristics and C-V characteristics of AlGaN/GaN HEMT was simulated and analyzed. The 8 doped layer was introduced to model the polarization effect. Then the capacitance-voltage and transfer characteristics of AlGaN/GaN HEMT with varied thickness of spacer layer were compared. With the spacer layer in creasing, the capacitance and transconduetanee decreased. So it's necessary to choose proper thickness of spacer layer for various applications.
出处 《闽江学院学报》 2006年第5期67-69,87,共4页 Journal of Minjiang University
关键词 ALGAN/GAN HEMT ISE TCAD SPACER AlGaN/GaN HEMT ISE TCAD spacer
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