摘要
介绍了一种宽带CMOS低噪声放大器设计方法，采用噪声抵消技术消除输入MOS管的噪声贡献．芯片采用TSMC0．25μm1P5M RF CMOS工艺实现．测试结果表明：在50-860MHz工作频率内，电压增益约为13．4dB；噪声系数在2．4-3．5dB之间；增益1dB压缩点为-6．7dBm；输入参考三阶交调点为3．3dBm．在2．5V直流电压下测得的功耗约为30mW．
A wide-band CMOS low-noise amplifier （LNA） is presented, in which the input MOSFET thermal noise is canceled by exploiting a noise-canceling technique. The chip was implemented in a TSMC 0.25μm 1P5M RF CMOS process. Test resuits show that in the range of 50-860MHz,the voltage gain is about 13.4dB,and the noise figure （NF） is below 3.5dB with a minimum NF value of 2.4dB at 350MHz. The input-referred ldB compression point is - 6. 7dBm, and the IIP3 is 3.3dBm. The chip consumes 30mW with a 2.5V power supply.
基金
上海市科学技术委员会(批准号:037062019)
上海应用材料研究与发展基金(批准号:0425)资助项目~~
关键词
宽带低噪声放大器
噪声系数
线性度
噪声抵消
wide-band low-noise amplifier
noise figure
linearity
noise-canceling
