摘要
In conjunction with ANSYS,we use the finite element method to analyze the bonding stresses of Si/ GaAs. We also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress, and peeling stress, taking into full consideration the thermal expansion coefficient as a function of temperature. Novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. Calculations show the validity of this new structure.
在考虑材料热膨胀系数随温度变化后,采用有限元方法结合ANSYS软件对Si/GaAs键合热应力进行了分析,研究了普通应力、轴向应力和剪切力的分布云图和沿界面的分布.同时提出了新的键合结构以减小热应力的影响,计算结果证明了该结构的有效性.
基金
国家重点基础研究发展规划资助项目(批准号:2003CB314902)~~
