摘要
LDMOS功率放大器的热效应会导致放大器的性能恶化,在LDMOS场效应管自热效应模型的基础上分析和仿真了一种最小化器件热效应的偏置电路设计。实验结果验证了偏置电路的仿真设计方法的有效性。
The thermal effect of LDMOS power amplifiers deprives its performances. On the basis of the self-heating effects model of LDMOS FET, analyze and simulate a design of biasing circuit minimizing thermal effect. Finally, the experiment results verify the validity of design.
出处
《电子工艺技术》
2006年第6期333-335,共3页
Electronics Process Technology
