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表面应力测量SOI压阻悬臂梁传感器设计与优化 被引量:1

Design and Optimization of SOI Piezoresistive Microcantilever Sensors for Use in Surface Stress Measurement
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摘要 研究了基于SOI(silicononinsulator)工艺的压阻悬臂梁传感器的静态和动态特性,推导了其用于表面应力测量时灵敏度和分辨率的表达式.分析了各种参数对性能的影响,提出了参数设计与优化的流程.得到了一套灵敏度为-1·8×10-3m/N,分辨率为8·5×10-5N/m,弹性系数为0·023N/m,谐振频率为1·3×104Hz的设计参数. The dynamic and static characteristics of SOI piezoresistive microcantilever sensors are studied. Expressions for predicting the sensitivity and resolution of sensors used in surface stress measurement are derived. According to analysis of the influence of the parameters on the performance of the sensors, a parameter design and optimization process is presented. A suit of design parameters is deduced, with a sensitivity of - 1.8 × 10^- 3 m/N, a resolution of 8. 5 × 10^- 5 N/m, an elasticity coefficient of 0. 023N/m,and a resonance frequency of 1.3 × 10^4 Hz.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第10期1844-1850,共7页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60401009) 清华大学基础研究基金(批准号:JC2003061)资助项目~~
关键词 MEMS 压阻 SOI 表面应力测量 悬臂梁 传感器 MEMS piezoresistive SOI surface stress measurement cantilever sensor
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参考文献24

  • 1Binnig G,Quate C F,Gerber C.Atomic force microscope.Phys Rev Lett,1986,56(9):930 被引量:1
  • 2Kim K H,Ko J S,Cho Y H,et al.A skew-symmetric cantilever accelerometer for automotive airbag applications.Sensors and Actuators A,1995,50(1/2):121 被引量:1
  • 3Lang H P,Baller M K,Berger R,et al.An artificial nose based on a micromechanical cantilever array.Analytica Chimica Acta,1999,393(1~3):59 被引量:1
  • 4Fritz J,Baller M K,Lang H P,et al.Translating biomolecular recognition into nanomechanics.Science,2000,288 (5464):316 被引量:1
  • 5Hafizovic S,Barrettino D,Volden T,et al.Single-chip mechatronic microsystem for surface imaging and force response studies.PNAS,2004,101(49):17011 被引量:1
  • 6Beroulle V,Bertrand Y,Latorre L,et al.Monolithic piezoresistive CMOS magnetic field sensors.Sensors and Actuators A,2003,103(1/2):23 被引量:1
  • 7Vancura C,Yue Li,Kirstem K U,et al.Fully integrated CMOS resonant cantilever sensor for biochemical detection in liquid environments.Solid-State Sensors,Actuators and Microsystems,Transducers' 05,2005:640 被引量:1
  • 8Harleya J A,Kenny T W.High-sensitivity piezoresistive cantilevers under 100nm thick.Appl Phys Lett,1999,75(2):289 被引量:1
  • 9Gotszalk T,Grabiec P B,Rangelow I W.A novel piezoresistive microprobe for atomic and lateral force microscopy.Sensors and Actuators A,2005,123/124(23):370 被引量:1
  • 10Tang Yuxing,Aslam D M,Wang Jianbai,et al.Study of polycrystalline diamond piezoresistive position sensors for application in cochlear implant probe.Diamond and Related Materials,2006,15(2/3):199 被引量:1

二级参考文献13

  • 1Fritz J, Baller M K, Lang H P,et al. Translating biomolecular recognition into nanomechanics. Science, 2000, 288(5464) :316. 被引量:1
  • 2Porter T L,Eastman M P, Pace D L,et al. Sensor based on piezoresistive microcantilever technology. Sensors and Actuators A,2001,88:47. 被引量:1
  • 3Battiston F M, Ramseyer J P, Lang H P, et al. A chemical sensor based on a microfabricated cantilever array with simultaneous resonance-frequency and bending readout. Sensors and Actuators B,2001,77:122. 被引量:1
  • 4Maute M,Raible S,Prins F E,et al. Fabrication and application of polymer coated cantilever as gas sensors. Microelectronic Engineering, 1999,46 : 439. 被引量:1
  • 5Baller M K,Lang H P,et al. A cantilever array-based artifical nose. Ultramicroscopy, 2000,82 : 1. 被引量:1
  • 6Harley J A,Kenny T W. Design and process optimization of piezoresistive cantilevers. IEEE Microelectromechanical Systems,2000,9:226. 被引量:1
  • 7Gotszalk T,Grabiec P,et al. Piezoresistive sensors for scanning probe microscopy. Ultramicroscopy, 2000,82 : 39. 被引量:1
  • 8Moulin A M, O'Shea S J, Welland M E. Microcantilever-based biosensor. Ultramicroscopy, 2000,82: 23. 被引量:1
  • 9Hooge F N. Phys Lett A,1969,29:139. 被引量:1
  • 10Chen Y, Salm C, Hooge F N ,et al. 1/f noise in polycrystalline SiGe analyzed in term of mobility fluctuations. Solid-State Electron, 1999,43: 1715. 被引量:1

共引文献1

同被引文献11

  • 1Smith C S. Piezoresistance effect in germanium and silicon. Phys Rev, 1954,94 : 42 被引量:1
  • 2Porter T L,Eastman M P,Pace D L, et al. Sensor based on piezoresistive microcantilever technology. Sensors and Actuators A, 2001,88:47 被引量:1
  • 3Harley J A, Kenny T W. High-sensitivity piezoresistive cantilevers under 1000A thick. Appl Phys Lett, 1999,75:289 被引量:1
  • 4Toriyama T,Tanimoto Y,Sugiyama S. Single crystal silicon nanowire piezoresistors for mechanical sensors. J Microelectromech Syst, 2002,11 : 605 被引量:1
  • 5He R R, Yang P D. Giant piezoresistance effect in silicon nanowires. Nature Nanotechnology,200G, 1:42 被引量:1
  • 6Pramanik C, Banerjee S,Saha H,et al. Piezoresistivity of silicon quantum well wire. Nanotechnology, 2006,17 : 3209 被引量:1
  • 7Sun C T, Zhang H T. Size-dependent elastic moduli of platelike nanomaterials. J Appl Phys,2003,93 : 1212 被引量:1
  • 8Luttinger M,Kohn W. Motion of electrons and holes in perturbed periodic fields. Phys Rev, 1955,97 : 869 被引量:1
  • 9Chao C Y, Chuang S L. Spin-orbit-coupling effects on the valenceband structure of strained semiconductor quantum wells. Phys Rev B,1992,46:4110 被引量:1
  • 10Sun Y, Thompson S E, Nishida T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J Appl Phys,2007,101 : 104503 被引量:1

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