摘要
研究了硅悬臂梁的光致应变效应的基本理论.从力学和半导体物理学基本理论出发,考虑了光生载流子的空间分布以及载流子表面复合,提出了一种新的光致悬臂梁弯曲的模型和计算光致应变效应引起的悬臂梁弯曲量的方法.模型更为合理的解释了光致悬臂梁弯曲的根本动力,其计算结果和实验测量结果与文献报道相比更为接近.研究为基于光致应变效应的硅悬臂梁传感器打下了理论基础.
Theory of photostriction effect on silicon microcantilevers is studied. Based on fundamental mechanics and semiconductor physics, and considering the spatial distribution and surface recombination of photoinduced carriers, we build a new model for photo-induced bending of silicon microcantilevers and calculation of the photo-induced deformation, The model interprets the motivity of photoinduced bending more reasonably than former reported.. In addition, results worked out from the model approximates to the experimental values much better. This study establishes the theoretical ground for researches of silicon microcantilever sensors based on photostriction effect.
出处
《传感技术学报》
CAS
CSCD
北大核心
2006年第05A期1693-1696,共4页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金项目资助(60476032)
关键词
光致应变效应
微悬臂梁
弯曲
photostriction effect
microcantilevers
bending
