摘要
退火处理对复合薄膜的形貌和结构都将产生较大的影响,对由水热腐蚀技术制得的铁钝化多孔硅进行高纯氮气(99.999 9%)下900℃退火3 h,利用扫描电镜(SEM)、XRD等分析手段对比研究了铁钝化多孔硅在退火前与退火后的结构变化特点.发现在微米层次上,退火后的多孔硅样品基本保持了退火前样品表面的规则阵列排布形式;在纳米层次上,退火后样品表面的硅柱仍呈多孔状,但孔壁的硅晶粒长大,平均晶粒尺寸由退火前的5 nm长大为退火后的17.2 nm.
Effect of annealing at high temperatures on compound films structures is great. For three hours in pure nitrogen（99.999 9% ） ambients at 900℃ are annealed. The structural feature changes of iron-passived porous silicon are studied after being annealed by SEM and XRD. It is found that the structural feratures of Si-NPA, such as pillar array, porousity et al, are maintained, but the silicon grain size increases from 5 nm to 17.2 nm after being annealed in nitrogen.
出处
《华北水利水电学院学报》
2006年第4期95-97,共3页
North China Institute of Water Conservancy and Hydroelectric Power
关键词
铁钝化多孔硅
高纯氮气退火
规则阵列
iron-passived porous silicon
pure nitrogen（99.999 9 % ） ambients
regular array
