摘要
介绍了一种新的单粒子效应模拟试验技术——脉冲激光模拟试验方法。对脉冲激光束进行单粒子效应试验研究的基本机理进行了分析讨论。总结分析了电子器件及集成电路单粒子效应激光模拟试验研究结果,给出了单粒子效应脉冲激光模拟试验的一般评估方法,并对采用脉冲激光模拟单粒子翻转试验获得的试验数据与重离子试验数据的等效性进行了比对分析。结果表明,激光模拟试验得出的LET阈值大小与重离子试验结果基本一致。
A new method which pulsed laser was used to simulate Single Event Effects is reported. The mechanism of single event effects induced by pulsed laser is discussed. The experimental results of some electronic device and integrated circuits are analyzed and summarized, and the evaluating method is proposed for using pulsed laser to simulate single event effects. The experimental data of single event upset induced by pulsed laser are compared with the one of heavy ion. The results show that the Linear Energy Transform （LET） threshold of single event effects induced by pulsed laser are consistent with the one of heavy ions for some device and integrated circuits.
出处
《真空与低温》
2006年第3期166-172,175,共8页
Vacuum and Cryogenics
关键词
单粒子效应
脉冲激光
集成电路
试验方法
single event effects
pulsed laser
, Integrated circuits
test methods
