摘要
以具有规则表面形貌的硅纳米孔柱阵列(Silicon Nanoporous Pillar Array,Si-NPA)作为还原性衬底和组装模板,采用浸渍技术制备了铜/Si-NPA(Cu/Si-NPA)纳米复合体系。将新鲜制备的Cu/Si-NPA样品分别在400°C、600°C和800°C氮气气氛中退火,对比研究了沉积于Si-NPA衬底之上的铜纳米颗粒的表面形貌、晶粒尺寸随温度的演化规律。在较低、较高温度下退火时,铜纳米颗粒所发生的定向迁移、颗粒长大及中心凝聚现象分别在Ostwald成熟理论和团簇扩散理论的框架下得到了解释。
Using regularly patterned silicon nanoporous pillar array （Si-NPA） as reducing substrate and assembly template, copper/Si-NPA nanocomposite system （Cu/Si-NPA） was prepared by immersion plating method. The freshly prepared Cu/Si-NPA samples were then annealed in nitrogen ambient at temperatures of 400~C, 600%, and 800%, respectively, and the evolution of the surface morphology and particle size of the copper nanoparticles deposited on Si-NPA with temperature was investigated by comparison method. The experimentally observed phenomena of the directive migration, the particle growth, and the central conglomeration of the copper nanoparticles were explained under the theoretical frames of Ostwald ripening and cluster diffusion.
出处
《科学技术与工程》
2006年第17期2728-2732,共5页
Science Technology and Engineering
基金
国家自然科学基金(10574112)资助
