期刊文献+

NdTbCo/Cr非晶垂直磁化膜的制备及性能 被引量:3

Preparation and Properties of NdTbCo/Cr Amorphous Perpendicular Magnetization Films
下载PDF
导出
摘要 采用射频磁控溅射法在玻璃基片上制备了NdTbCo/Cr非晶垂直磁化膜。探讨了溅射功率与溅射时间对薄膜磁性能的影响,发现当溅射功率为250 W,溅射时间为4 min时,垂直膜面方向矫顽力为272.8 kA.m-1,剩磁矩形比达到0.801,可以较好地满足高密度垂直磁记录的要求。研究了Nd掺杂对薄膜磁性能与磁光性能的影响,发现随着Nd掺杂量的增多,薄膜的矫顽力从413.8下降为210.9 kA.m-1,饱和磁化强度与克尔旋转角则分别从144 kA.m-1和0.2720°上升为252 kA.m-1和0.3258°。温度对NdTbCo/Cr薄膜克尔旋转角的影响也与Nd的掺杂量密切相关。 NdTbCo/Cr amorphous perpendicular magnetization films were prepared onto glass substrate by RF magnetron sputtering. The effects of sputtering power and sputtering time on the magnetic properties were investigated. It is found that when the sputtering power and sputtering time are 250 W and 4 min, respectively, perpendicular coercivity and remanence square ratio reach 272.8 kA·m^-1 and 0.801, respectively, suitable for high density perpendicular magnetic recording. Furthermore, the influence of Nd addition on the magnetic and magneto-optical properties of TbCo/Cr thin films were studied. With the increment of Nd addition, coercivity decreases from 413.8 to 210.9 kA · m^- 1, however, saturation magnetization and Kerr rotation angle increases from 144 kA· m^-1 and 0. 2720° to 252 kA· m^-1 and 0. 3258°, respectively. The temperature dependence of Kerr rotation angle is also related to the concentration of Nd addition.
出处 《稀有金属》 EI CAS CSCD 北大核心 2006年第4期432-435,共4页 Chinese Journal of Rare Metals
基金 国家自然科学基金重大项目(60490290) 国家自然科学基金项目(60571010)资助
关键词 射频磁控溅射 非晶垂直磁化膜 矫顽力 剩磁矩形比 饱和磁化强度 克尔旋转角 radio frequency magnetron sputtering amorphous perpendicular magnetization films coercivity remanence square ratio saturation magnetization Kerr rotation angle
  • 相关文献

参考文献4

二级参考文献23

  • 1Lee Z Y, Miao X S, Zhu P, Hu Y S, Wan D F, Dai D W,Chen S B and Lin G Q 1992 J. Magn. Magn. Mater. 11544. 被引量:1
  • 2Huang Z X, Lee Z Y, Jin F, Cheng X M, Xu X H, Li Z.,Wang X Ft and Lin G Q 2002 Chin. Phys. Lett. 19 1533. 被引量:1
  • 3Ruigrok J J M, Goehoom R, Gumpson S R and Kesteren H W 2000 J. Appl. Phys. 87 5398. 被引量:1
  • 4Katayama H, Hamamoto M, Sato J, Murakami Y and Kojima K 2000 IEEE Trans. Magn. 36 195. 被引量:1
  • 5Saga H, Nemto H, Sukeda H and Takahashi M 1999 Jpn.J. Appl. Phys. 38 1839. 被引量:1
  • 6Daval J and Bechevet B 1994 J. Magn. Magn. Mater. 12998. 被引量:1
  • 7Lee Z Y, Miao X S, Zhu P, Hu Y S, Lin G Q and Wan D F1991 J. Magn. Soc. Jpn. 15 421. 被引量:1
  • 8Yoshino S, Takagi H, Tsunashima S, Masuda M and Chiyama S 1984 Jpn. J. Appl. Phys. 23 188. 被引量:1
  • 9Lee Z Y, Numata T and Sakurai Y 1983 Jpn. J. Appl.Phys. Lett. 22 L600. 被引量:1
  • 10Wan D F and Ma X L 1999 Magnetic Physics (Beijing:Publishing House of Electronics Industry) 375 (in Chinese). 被引量:1

共引文献15

同被引文献33

引证文献3

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部