摘要
采用包络函数方法对生长在Ｇｅ０３Ｓｉ０７（００１）衬底上势垒区δ掺杂量子阱Ｇｅ０３Ｓｉ０７／Ｓｉ／Ｇｅ０３Ｓｉ０７的电子能带结构及子带间光吸收特性进行了自洽的计算．对光吸收系数与量子阱的阱宽、δ掺杂位置及δ掺杂密度间的变化关系进行了讨论．
The electronic structures and intersubband absorption coefficients of Ge 0 3 Si 0 7 /Si/ Ge 0 3 Si 0 7 quantum wells with barrier δ doping grown on Ge 0 3 Si 0 7 (001) substrates are consistently calculated in the envelopefunction approach. The dependences of the absorptivities on the well widths, δ doping position and δ doping concentration are discussed. At last, the frequency shift caused by the depolarization effects of highly dense two dimensional electrons are studied.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第10期1762-1770,共9页
Acta Physica Sinica
基金
国家自然科学基金
