摘要
本文介绍了一种使用Ｘ射线宽角测角仪和双晶测角仪相配合的检测半导体异质外延薄膜的方法．其特点是快速且不损伤样品，特别适合大失配度的外延生长的条件试验检测，也可用于器件生产过程中的外延质量的监控．此法还可用于各种超晶格结构参数的测量．
The method of testing semiconductor hetero-epilayer using X-ray wide angle goniometer and double crystal goniometer was introduced. Two difficulties have been surmounted in this method. They are rectifing the orientation deviation of wafer and returning to normal position of θ=-0° of wide angle goniometer. With this method satisfactory results were obtained for different kinds of epilayers. This method may be applied to test the lattice mismatch between substrate and epilayer, composition and their variation, detect the perfectness of substrate and epilayer and evaluate the superlattice structure parameter etc.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第3期257-260,共4页
Chinese Journal of Luminescence
