摘要
本文提出量子态模型。发现在制备多晶硅薄膜过程中沉积温度、衬底、射频功率、氢稀释比、磷掺杂等沉积参数、多晶硅薄膜晶粒大小，以及二次晶化过程符合量子态模型。
The quantum states mode is proposed. Polycrystalline silicon thin film are studied, it is found that the quantum state model is shown between polycrystalline silicon size and the temperature, substrate, rf power, ratio of SiH4 in PECVD method. The quantum state model is also shown in the solid phase crystallize procession.
出处
《中国材料科技与设备》
2006年第4期42-46,共5页
Chinese Materials Science Technology & Equipment
