摘要
采用有效电离系数导出了６Ｈ－ＳｉＣ平面状及圆柱状ｐ＋ｎ结击穿电压的分析表达式，有效电离系数是由电子和空穴的电离系数获得的．示出在平面状情况下．基区掺杂浓度在１０１６～４×１０１７ｃｍ－３区间内，所计算的击穿电场和击穿电压与所公布的实验结果完全一致。所得分析结果可用于对６Ｈ－ＳｉＣ器件中击穿电压作出简单的预测。
The analytic expressions of breakdown voltages for 6H-silicon carbide parallel-plane p+njunction anti cylindrical p+n junction are derived by employing effective ionization coefficient,which is obtained from the ionization coefficients for electron and hole. It is shown in the parallel-plane case that the caleulated breakdown field and breakdown voltage agree well with the published experimental results in the range of background doping concentration 1016～4×1017cm-3. The analytical results are applicable to the simple prediction of the breakdown voltage in 6H-SiC device.
出处
《电力电子技术》
CSCD
北大核心
1996年第3期91-93,共3页
Power Electronics
