摘要
将中频磁控溅射方法沉积制备的镱铒共掺Al2O3薄膜刻蚀成矩形截面、直线通道的光波导放大器·测量了净增益与抽运功率的关系,结果表明:净增益随抽运功率近似线性增加,阈值抽运功率为18mW;抽运功率为68mW时,长2.24cm的光波导放大器净增益为8.44dB·数值模拟结果显示,相同抽运功率下的净增益为10.6dB·
Yb ： Er co-doped Al2O3 films fabricated by the technique of the medium frequency magnetron sputtering were sculptured to rectangle waveguide amplifiers （YECDWA） with beeline channel. The relationship between net gain and pump power was measured. The results show that net gain of the YECDWA increases approximately linear as pump power is increased. The threshold is 18mW. The net gain of the 2.24 cm long YBCDWA is 8.44 dB pumped under 68 mW. The numerical simulation displays, however, that net gain of the YECDWA is 10.6dB pumped under same power.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2006年第5期650-654,共5页
Acta Photonica Sinica
基金
国家自然科学基金(批准号:60477023
60478035)
辽宁省科学技术厅(批准号:20022110)
辽宁省教育厅(批准号:202123198)基金资助项目
关键词
镱铒共掺光波导放大器
薄膜制备
净增益
数值模拟
Yb ： Er co-doped waveguide amplifier
Fabrication of film
Net gain
Numerical simulation
