摘要
检测系统提取直流局部放电(DCPD)信号后,须进一步处理,从而准确判断缺陷状况。描述直流局部放电信号的基本参数是放电量q及放电发生时刻t,通过对膜纸复合储能电容器进行直流局部放电检测,比较了含有不同人工缺陷的电容器的基于Δt方法的二维统计分布图及指纹谱图;研究了不同寿命阶段储能电容器的q-n曲线。试验结果表明,基于Δt方法的特征谱图能用于区分电容器缺陷类型;不同电容器在老化阶段的q-n曲线变化规律并不一致,说明该曲线难以表征电容器的老化进程。最后,提出采用Δt方法来表征电容器绝缘的老化进程。
PD under DC condition is analyzed to diagnose insulation statues. Basic parameters are discharge quantity q and time t when PD occurs. The fingerprints based on △t method, produced from the PD data of various capacitors containing different kinds of defects, are compared. Test results show that the △t method is efficient to show defects type of the capacitors. The experiment identifies that q-n curves of different model capacitors do not vary identically during their aging. At the end of this paper, △t method is proposed to distinguish the life stages of test capacitors.
出处
《电工技术学报》
EI
CSCD
北大核心
2006年第4期46-49,共4页
Transactions of China Electrotechnical Society
基金
国家自然科学基金联合基金(10476022)
西南交通大学博士创新基金联合资助项目
