摘要
采用0．18μm GaAs PHEMT工艺，设计和研制了34-40GHz毫米波单片混频器。该混频器选择了单平衡结构．采用180°电桥结构改善LO—RF的隔离度，并修改了该结构以方便布版。在39GHz频点上，该混频器的插入损耗小于7．2dB、LO—RF隔离度大于32dB。
A 34-40 GHz mixer MMIC has been designed and implemented with 0. 18 μm GaAs PHEMT process. The mixer employs single balanced structure. A modified 180 degree bridge is used to improve the isolation between LO and RF and provide convenience for layout. The mixer gives a low insertion loss of less than 7.2 dB, and high LO to RF isolation of above 32 dB at 39 GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第1期25-28,共4页
Research & Progress of SSE
基金
国家自然科学基金重点项目(No.90307016)
关键词
单平衡混频器
砷化铱
毫米波
插入损耗
隔离度
1分贝压缩点
single balanced mixer
GaAs
millimeter wave
insertion loss
isolation
1 dB compressing point
