摘要
RESURF LDM O S很难兼顾击穿电压和导通电阻对结构的要求。文中采用了D oub le RESURF(双重降低表面电场)新结构,使漂移区更易耗尽。从理论和模拟上验证了D oub le RESURF在漂移区浓度不变时对击穿电压的提高作用以及在保持击穿电压不变的情况下减小导通电阻的效果。同时,在LDM O S结构中加入D oub leRESURF结构也降低了工艺上对精度的要求。为新结构和新工艺的开发研制作前期设计和评估。
A conventional RESURF LDMOS could not be possessed of a high off-state breakdown voltage while achieving a low on-state resistance. To make drift region depletion much easier,a Double RESURF(Double REduce SURFace electronic field) structure is studied in this paper. The mechanism of raising breakdown voltage in the same concentration of drift region as RESURF LDMOS,and reducing the on-state resistance while preventing the breakdown voltage from dropping,is both analyzed theoretically and verified by simulation. A simplified process of the structure is proposed in brief. Also the evaluation for the new process is carried out.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第1期6-10,共5页
Research & Progress of SSE