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手机用彩色TFT-LCD驱动控制芯片的驱动电路设计 被引量:3

The Design of Driver Circuits for Color TFT-LCD Driver IC Used for Mobile Phone
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摘要 目前TFT-LCD彩色液晶显示屏被广泛应用于中高档彩屏手机中。TFT-LCD驱动控制芯片作为手机主机与TFT-LCD显示屏之间的接口电路,控制和驱动显示屏的彩色显示,其性能直接影响着显示画面的质量和系统功耗。文章从TFT-LCD的驱动原理出发,提出了手机用26万色彩色TFT-LCD驱动芯片的驱动电路设计方法,包括gamma校正电路,gatedriver电路和sourcedriver电路的结构与功能分析,最后给出了Hspice的仿真结果。 At present the color TFT-LCD displays are used widely in middle and top grade mobile phones. As the interface circuit between MPU of mobile phone and TFT-LCD panel, TFT-LCD driving and controlling VLSI controls and drives the color display of the TFT-LCD panel, its performance influences the display quality and the power consumption of TFT-LCD panel directly. In this paper the driving principles of TFT-LCD are discussed firstly, and then the design methods of driving circuit part for TFT-LCD driver IC used for 260 thousand colors mobile phone are described, including the structure and the function analysis of the gate driver circuit, gamma correction circuit and the source driver circuit. Finally, the results of Hspice simulation are given.
出处 《微电子学与计算机》 CSCD 北大核心 2006年第3期165-168,171,共5页 Microelectronics & Computer
基金 国家"863"计划项目(2005AA1211) 陕西省科学技术研究发展计划项目(2004K05-G3)
关键词 TFT-LCD彩色液晶显示 驱动IC SOURCE driver GATE DRIVER Color TFT-LCD display, Driver IC ,Source driver, Gate driver
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  • 1张志伟,荆海,黄金英,邝俊峰,蔡克烜,朱长春.小尺寸TFT-LCD驱动电路的设计[J].长春理工大学学报(自然科学版),2005,28(1):10-13. 被引量:4
  • 2吕品,傅兴华,王明甲,张万里.一种4灰度级LCD驱动芯片的设计研究[J].微电子学与计算机,2006,23(1):123-125. 被引量:3
  • 3Harada K, Kimura H, Miyatake M, et al. A novel low power-consumption all digital system-on-glass display with Serial interface[J]. J Soc Inf Disp, 2010, 18(1): 30-36. 被引量:1
  • 4Fortunato G, Mariucci L, Carluccio R, et al. Excimer laser crystallization techniques for polysilieon TFTs[J]. Appl Surf Sci, 2000, 154: 95-104. 被引量:1
  • 5Little T W, Takahara K I, Koike H, et al. Low tem- perature poly-Si TFTs using solid phase crystallization (SPC) of very thin films and an ECR-CVD gate insula- tor [C]// Conf Solid State Devices Mater. Yokohama, 1991: 644-646. 被引量:1
  • 6Tallarida G, Pecora A, Fortunato G, et al. Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors [J]. J Non Cryst Solids, 1995, 187:195-198. 被引量:1
  • 7Farmakis F V, Dimitriadis C A, Brini J. Photon emis-sion and related hot carrier effects in polycrystalline sili con thin-film transistors [J]. J Appl Phys, 1999, 85 (9) : 6917-6919. 被引量:1
  • 8Chang K M, Chung Y H, Lin G M. Anomalous varia- tions of OFF-State leakage current in poly-Si TFT under static stress [J]. IEEE Electron Device Lett, 2002, 23 (5) : 255-257. 被引量:1
  • 9Pecora A, Schillizzi M, Tallarida G, et al. Off-current in polycrystalline silicon thin film transistors: an analy- sis of the thermally generated component [J]. Solid State Electron, 1995, 38(4) :845-850. 被引量:1
  • 10Yeh C F, Lin S S, Yang T Z, et al. Performance and off-state current mechanisms of low-temperature pro- cessed polysilicon thin-film transistors with liquid phase deposited SiO2 gate insulator [J]. IEEE Trans on ED, 1994, 41(2) :173-179. 被引量:1

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