摘要
The deformation potential and piezoelectric field in nitride GaN/AIN quantum dots （QDs） are investigated in the framework of effective mass approximation （EMA） and finite element method （FEM）. The strained fields and piezoelectric characteristics are studied by using FEM for GaN/AIN QDs （GaN embedded in AIN） in the shape of truncated hexagonal pyramids. We presented the calculated results of the electronic states, wave functions, QD strain field distribution and piezoelectric effects in the QDs. Effects of spontaneous and piezoelectric polarization are taken into account in the calculation. The theoretical results are dependent on QD shapes and sizes. Some of them make the GaN/AIN QDs interesting candidates in optoelectronic applications.
The deformation potential and piezoelectric field in nitride GaN/AIN quantum dots （QDs） are investigated in the framework of effective mass approximation （EMA） and finite element method （FEM）. The strained fields and piezoelectric characteristics are studied by using FEM for GaN/AIN QDs （GaN embedded in AIN） in the shape of truncated hexagonal pyramids. We presented the calculated results of the electronic states, wave functions, QD strain field distribution and piezoelectric effects in the QDs. Effects of spontaneous and piezoelectric polarization are taken into account in the calculation. The theoretical results are dependent on QD shapes and sizes. Some of them make the GaN/AIN QDs interesting candidates in optoelectronic applications.
基金
Supported by the National Natural Science Foundation of China under Grant No 60376014.
