摘要
利用恒电流沉积法，在ｐ－Ｓｉ上制备出不同Ｗ含量和不同结构的Ｎｉ－Ｗ薄膜，研究了镀液温度，ｐＨ值，电流密度对镀层组成的影响，结果表明，提高温度有利于获得高Ｗ含量的合金．随着镀层中Ｗ含量的增加，Ｎｉ面心立方晶格ｆ．ｃ．ｃ发生正畸变，晶粒平均尺寸变小，当Ｗ含量达到５６％以上时，晶粒小于２ｎｍ，薄膜呈非晶态结构．
Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56/00, the size of grains decreases to below 2 nm and the film has an amorphous structure.
出处
《应用化学》
CAS
CSCD
北大核心
1996年第2期11-14,共4页
Chinese Journal of Applied Chemistry
基金
国家自然科学基金
关键词
电沉积
合金薄膜
镍
钨
非晶态
p-type silicon, nickel-tungsten alloy, electrodeposition, amorphous state
