摘要
本文报告了一种适用于大规模生产 GaAs 红外发光二极管的开管 Zn 扩散新工艺。详细叙述了开管 Zn 扩散的方法。实验结果表明表面载流子浓度达10~19cm^(-3),结深为2.0μm。
A new techology of open tube Zn diffusion available for large scale production of GaAs IR LEDs is reported.The technique of open tube Zn diffusion is described in detail.Experimental results indicate that surface carrier concentation as high as 10 cm is obtained with the junction depth of 2.0μm.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第4期379-381,共3页
Semiconductor Optoelectronics
