摘要
首次报道Si衬底GaN LED的理想因子。通过GaN LEDI-V曲线与其外延膜结晶性能相比较,发现理想因子的大小与X射线双晶衍射摇摆曲线(102)面半峰宽有着对应关系:室温时Si衬底GaN LED的理想因子为6.6,对应着半峰宽707arcsec;理想因子为4.5时,对应半峰宽530arcsec。蓝宝石衬底GaN LED理想因子为3.0,其对应半峰宽401arcsec。硅衬底GaN LED理想因子大的原因可以归结为高缺陷密度所致,高缺陷密度使电流隧穿更容易进行。
The ideality factor of GaN LED on Si substrate was studied. By studying the relation between Ⅰ-Ⅴ characteristics of different samples and their crystal properties, which were characterized by the full - width at half- maximum（ FWHM ）of the △w -rocking curve for GaN（102） double crystal X- ray diffraction peak,it is found that there is direct relation between the ideality factor and the crystal property： the ideality factors for the three samples are 6.6 ,4.5,3.0, respectively, which are corresponding to the （102） DCXRD FWHM of each sample ： 707, 530,401 ,respectively. The anomalously high ideality factors （n〉〉2.0） are Contributed to the high defect density , which makes tunneling current take place more easily.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2006年第1期45-48,共4页
Journal of Functional Materials and Devices
基金
国家863纳米专项(No.2003AA302160)
电子发展基金资助
