摘要
本文介绍了等离子刻蚀和去胶对MOS、MNOS电容器和双极晶体管所产生的辐射损伤的激光退火,用连续CO_2激光器从背面照射蕊片,可以明显地降低各种MIS结构中的固定电荷和界面陷阱,完全消除辐射损伤,使被损伤的器件特性得到恢复并有所改善,使集成电路成品率明显提高。
The paper presents laser annealing of radiative damage on MOS,MNOS capacitors and bipolar transistors exposed to plasma etching and strip resist. Excess fixed charge and surface states densities in various MIS structures have been successfully reduced by CW CO2 laser irradiation from back surface. The radiative damage has been effectively removed by this technique. It can restore and improve the characteristics of radiated damage devices, The yield of IC has been obviously raised.
出处
《激光杂志》
CAS
1985年第6期300-302,299,共4页
Laser Journal
