摘要
在可靠性筛选中检测具有潜在损伤的器件一直是个难题.对GaA lAs红外发光二极管(IRLED)功率老化前后低频噪声的测量发现,1/f噪声幅值与偏置电流的γ次方成正比(小电流区γ=1,在大电流区γ≈2),且老化后1/f噪声幅值比老化前增大2个数量级.基于载流子数涨落和迁移率涨落机制建立了一个GaA lAs IR LED的1/f噪声模型,分析结果表明GaA lAs IR LED的1/f噪声在小电流时反映体陷阱特征,大电流时反映激活区陷阱特征,1/f噪声的增加归因于功率老化诱生的界面陷阱和表面陷阱,1/f噪声可以用来检测GaA lAs IR LED s的潜在缺陷.
Detecting the latent damage of devices by reliability screen is an ever exiting difficult problem. 1/f noise in GaAlAs infrared ray LEDs （ IR LEDs） was experimentally studied over a wide range of bias currents with special emphasis on power aging. Experimental results demonstrate that the magnitude of 1/f noise increases 2 order of magnitude after aging and it is proportion to the current IF^γ （at small currents,γ ≈ 1, at large currents,γ ≈2）. Based on the mechanisms of carrier density and mobility fluctuation, a model for 1/f noise in GaAlAs IR LEDs is developed. It is showed that at small currents, 1/f noise reveals characteristics of bulk defects, while at large current＇, it reveals active defects. The increase of 1/f noise is due to some new interface traps and surface traps that are induced by power aging. 1/f noise can be used to diagnose latent traps in GaA1As IR LEDs.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第1期33-36,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(60276028)
国防预研基金(51411040601DZ014)
国防科技重点实验室基金(51433030103DZ01)
