摘要
对各种发光二极管(LEDs)的负电容(NC)进行了研究。实验结果表明,所有的LEDs都展示了NC现象。电压调制发光(VMEL)实验确认,在发光有源区中注入载流子引起的强发光复合是产生NC现象的基本原因。测量还表明,不同的LEDs的NC随电压和频率的变化规律是类似的;测试频率越低,正向偏压越高,NC现象越明显。
The experimental study on negative capacitance（NC） of various light-emitting diodes（LEDs） was presented. Experimental results show that all LEDs display the NO phenomenon. The voltage modulated electroluminescence（VMEL） experiment confirms that the reason of negative capacitance could be the strong recombination of the injected carries in the active region of luminescence. The measures also verify that the dependence of NO on voltage and frequency in different LEDs is similar;NO phenomenon is more obvious with higher voltage or lower frequency.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2006年第1期1-4,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60376027)
