摘要
报道了采用欠饱和溶液的回熔—再生长液相外延（ＬＰＥ）方法制备高效ＡＩｘＧａ１－ｘＡｓ／ＧａＡｓ异质结构太阳电池的工艺。研究表明，与传统的过冷生长技术相比，回熔工艺对衬底质量的要求不严格，且能形成有利于光生少子被收集的带隙结构。在工艺优化的情况下，获得大阳电池的全面积转换效率在ＡＭ０，１ｓｕｎ的测试条件下为１８．７８％（０．７２ｃｍ２），在ＡＭ１．５，１ｓｕｎ下为２３．１７％。
AlxGa1-x As/GaAs solar cells have been fabricated by using liquid phase epitaxy (LPE) etchback-regrowth method. The results indicate that the P+ PNN+ epitaxialstructure grown by this method can effectively reduce the defects of substrate and improve minority carrier collection by forming a composition-graded region in the window layer. By optimizing the growth condition,the best performance with conversion efficiency of 18. 78% under AM0, lsun or 23. 17% under AM1. 5, lsun conditions is exhibited (0. 72 cm2, uncorrected for contact area).
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第2期103-109,共7页
Research & Progress of SSE
关键词
液相外延
太阳能电池
转换效率
砷化镓
Liquid Phase Epitaxy GaAs Solar Cell Conversion Efficiency
